Dry-etching method

Details Dry-etching method Dry-etching method

2007-02-27

2007-02-27

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S700000, C438S978000, C257SE21233

Reexamination Certificate

active

10481645

ABSTRACT:
A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed electrodes to effect a plasma etching. The plasma etching uses a gas containing at least Cl2and HBr. Trenches104a, 104bare formed, as shown in FIG.1B, in a silicon wafer101shown in FIG.1A through a mask layer such as a nitride silicon layer103. While adjusting the high-frequency power supplied to the opposed electrode where the wafer is placed, the shape of the sidewalls105a, 105bof the trenches104a, 104bis controlled. Thus, the trenches can have desired shapes even if the widths of the trenches are different.

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