Dry etching method

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S730000

Reexamination Certificate

active

06875698

ABSTRACT:
In dry etching process wherein a substrate having a multi-layer film is etched, the etching process is monitored by determining a layer being processed. CHF3gas is added to the processing gas during a period from the time when the lowermost layer on the substrate is etched until the etching is completed.

REFERENCES:
patent: 4478677 (1984-10-01), Chen et al.
patent: 5445710 (1995-08-01), Hori et al.
patent: 5883007 (1999-03-01), Abraham et al.
patent: 5939831 (1999-08-01), Fong et al.
patent: 5952244 (1999-09-01), Abraham et al.
patent: 6097094 (2000-08-01), Ishigami

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