Dry etching method

Details Dry etching method Dry etching method

1993-03-04

1994-05-10

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 1566591, 252 791, B44C 122, C03C 1500, C03C 2506

Patent

active

053104544

ABSTRACT:
A dry etching method by a plasma etching forms a mask pattern, having an opening up to 1 .mu.m width on a silicon oxide layer formed on a silicon substrate. The substrate is laced into a reactive chamber having an etching gas introducing means and fluorocarbon gas and hydrogen gas as the etching gas are introduced such that a ratio of the hydrogen gas to the gas mixture satisfies 50% to 80%. The plasma is generated, and by using the plasma etching, the silicon oxide layer is etched according to the mask pattern to form an opening having an aspect ratio of more than 1 in the silicon oxide layer.

REFERENCES:
patent: 4283249 (1981-08-01), Ephrath
patent: 4462863 (1984-07-01), Nishimatsu et al.
patent: 4666555 (1987-05-01), Tsang
Selective Etching of Silicon Dioxide Using Reactive Ion Etching with CF.sub.4 -H.sub.2, L. M. Ephrath, J. Electrochem. Soc., 126:1419-1421 (1979).
Control of Relative Etch Rates of SiO.sub.2 and Si in Plasma Etching, Heinecke, Solid State Electronics, 18:1146-1147 (1975).

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