Dry-etching method

Details Dry-etching method Dry-etching method

1985-11-19

1987-07-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 156662, 20419235, 252 791, 427 38, B44C 122, C03C 1500, C03C 2506

Patent

active

046785396

ABSTRACT:
A dry-etching method for etching materials of the silicon group comprises: providing the material to be etched in a reaction chamber; supplying a mixed gas as the etching gas comprising carbon fluoride, oxygen and another gas wherein the other gas is a partially halogenated hydrocarbon; and thereafter subjecting the etching gas to high frequency electric current so as to make the mixed gas into a plasma whereby the material is etched.

REFERENCES:
patent: 4374698 (1983-02-01), Sanders et al.

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