Dry etching method

Details Dry etching method Dry etching method

1990-04-02

1994-10-11

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 156662, 156664, H05H 100

Patent

active

053544161

ABSTRACT:
Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.

REFERENCES:
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patent: 4253907 (1981-03-01), Parry et al.
patent: 4384918 (1983-05-01), Abe
patent: 4445966 (1984-05-01), Carlson et al.
patent: 4521275 (1985-06-01), Purdes
patent: 4557796 (1985-12-01), Druschke et al.
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4585668 (1986-04-01), Asmussen et al.
patent: 4609428 (1986-09-01), Fujimura
patent: 4615755 (1986-10-01), Tracy et al.
patent: 4943344 (1990-07-01), Tachi et al.
Bensaoula et al., "Low-temperature ion beam enhanced etching of tungsten films with xenon difluoride", Appl. Phys. Lett. 49(24), Dec. 15, 1986, pp. 1663-1664.
Parrens, "Anisotropic and Selective Reactive Ion Etching of Polysilicon Using SF.sub.6 " J. Vac. Sci. Technol., 19(4) pp. 1403-1407, Nov./Dec. 1981.
Schaible et al., "Reactive Ion Etching of Aluminum and Aluminum Alloys", IBM TDB, vol. 21, No. 4, p. 1468, Sep. 1978.

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