Dry etching method

Details Dry etching method Dry etching method

1992-03-30

1993-06-22

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156652, H01L 2100

Patent

active

052214303

ABSTRACT:
Proposed is a method for improving resist selectivity in dry etching of an aluminum-based material layer. A mixed gas containing a chlorine-based gas and hydrogen iodide (HI) is used as an etching gas. The chlorine-based gas furnishes Cl* as a main etchant for the Al-based material layer, while HI furnishes H*. For anisotropic etching of the Al-based material layer, decomposition products of a resist mask are used as a sidewall protection film. It has been known that deposition of the sidewall protection film is promoted when hydrogen atoms are contained in the sidewall protection film. HI is used in the present invention as a supply source for H* because the interatomic bond energy of its H--I bond is low as compared to that of H.sub.2, HCl or HBr so that HI is superior to the H* yielding efficiency under discharge dissociation conditions. In this manner, the bias power necessary for anisotropic etching may be reduced to inhibit sputtering out of the resist mask. Among practically useful etching gases are BCl.sub.3 /Cl.sub.2 /HI and Cl.sub.2 /HI.

REFERENCES:
patent: 4030967 (1977-06-01), Ingrey et al.
patent: 4919748 (1990-04-01), Bredfenner et al.
"Reactive Ion Etching of Piezoelectric Films for Acoustic Wave Devices"; Utrosonic Symposia Proceedings, 1, Abstract, 1982; Wang et al.
"Silicon Processing for the VLSI Era"; vol. 1; by Stanley Wolfe; .COPYRGT.1986; Lattice Press; Sunset Beach, Ca., pp. 559-563.

Affiliated with

Also associated with

Rating

Dry etching method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1439277