Dry etching method

Details Dry etching method Dry etching method

1997-02-11

1998-07-28

Kunemund, Robert

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

438714, 438909, H01L 21302

Patent

active

057858772

ABSTRACT:
An object to be etched is loaded in a low-pressure vapor phase processing chamber, and then an etching gas obtained by adding a small amount of additive gas of oxygen or additive gas at least containing oxygen to a reaction gas used for etching is fed to the low-pressure vapor phase processing chamber so as to suppress a reaction between the wall of the low-pressure vapor phase processing chamber and the reaction gas. In this state, the object to be etched is dry-etched with the etching gas.

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Tsuchizawa et al "Influence of Reaction Products and Oxygen on Highly Selective Electron Cyclotron Resonance Ion Stream Etching of Si" Jpn. J. Appl. Phys., vol. 11, Pt. 1, No. 10, pp. 6019-6024, Oct. 1994.

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