Dry etching method

Details Dry etching method Dry etching method

1990-10-10

1992-09-15

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, C23F 102

Patent

active

051475006

ABSTRACT:
A dry etching method is disclosed, in which the pressure of etching gas in a reaction chamber, the bias voltage applied to article to be etched, and the temperature of the article to be etched object are set so that the etching rate for the article to be etched is greater than 0.2 .mu.m/min, a ratio of the length of side etching in the article to be etched to the depth of etching therein is less than 1/100, and a ratio of the etching rate for the article to be etched to the etching rate for a mask formed thereon is greater than 10. Thus, the dry etching method can satisfy three requirements (that is, a high etching rate, a high selection ratio and marked anisotropy in etching) at the same time, although conventional dry etching methods can satisfy only two of three requirements.

REFERENCES:
patent: 4496448 (1985-01-01), Tai et al.
patent: 4640737 (1987-02-01), Nagasaka et al.
patent: 4786361 (1988-11-01), Sekine et al.
patent: 4798650 (1989-01-01), Nakamura et al.
patent: 4844767 (1989-07-01), Okudaira et al.
Kure et al, "Si Dry Etching and Its Application to U-Groove Isolation", Proc. Dry Process Symp., pp. 83-90, 1986.
Sekine et al, "Silicon Trench Etching Using 10.sup.-3 Torr Magnetron Discharge Reactive Ion Etching", Proc. Dry Process Symp., pp. 42-47, 1986.
Shimizu et al, "Silicon Substrate Etching and Pattern Profile Control", Proc. Dry Process Symp., pp. 121-126, 1984.

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