Dry etching method

Details Dry etching method Dry etching method

1995-05-30

1997-07-01

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

H05H 100, H01L 2100

Patent

active

056434731

ABSTRACT:
A dry etching method is disclosed, in which the pressure of etching gas in a reaction chamber, the bias voltage applied to article to be etched, and the temperature of the article to be etched object are set so that the etching rate for the article to be etched is greater than 0.2 .mu.m/min, a ratio of the length of side etching in the article to be etched to the depth of etching therein is less than 1/100, and a ratio of the etching rate for the article to be etched to the etching rate for a mask formed thereon is greater than 10. Thus, the dry etching method can satisfy three requirements (that is, a high etching rate, a high selection ratio and marked anisotropy in etching) at the same time, although conventional dry etching methods can satisfy only two of three requirements.

REFERENCES:
patent: 4483737 (1984-11-01), Mantei
patent: 4496448 (1985-01-01), Tai et al.
patent: 4640737 (1987-02-01), Nagasaka et al.
patent: 5147500 (1992-09-01), Tachi et al.

Affiliated with

Also associated with

Rating

Dry etching method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-594028