Dry etching gas and method for dry etching

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C252S079100, C216S079000, C216S080000

Reexamination Certificate

active

07931820

ABSTRACT:
A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF═CFCF═CF2). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.

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Korean Office Action dated Jan. 5, 2006.

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