Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2011-04-26
2011-04-26
Olsen, Allan (Department: 1716)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C252S079100, C216S079000, C216S080000
Reexamination Certificate
active
07931820
ABSTRACT:
A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF═CFCF═CF2). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.
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Korean Office Action dated Jan. 5, 2006.
Aoyama Hirokazu
Hirose Masataka
Itano Mitsushi
Nakamura Shingo
Daikin Industries Ltd.
Kratz Quintos & Hanson, LLP
Olsen Allan
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