Dry etching by alternately etching and depositing

Details Dry etching by alternately etching and depositing Dry etching by alternately etching and depositing

1989-10-06

1991-01-15

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156662, 1566611, 437228, 2041923, 20419232, H01L 21306, H01L 21321, H01L 21311

Patent

active

049851144

ABSTRACT:
A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.

REFERENCES:
patent: 4363868 (1982-12-01), Tasaka et al.
patent: 4529475 (1985-07-01), Okano et al.
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4599135 (1986-07-01), Tsunekawa et al.
patent: 4705595 (1987-11-01), Okudaira et al.
patent: 4732761 (1988-03-01), Machida
patent: 4795529 (1989-01-01), Kawasaki et al.
Tsujimoto et al., "A New Side Wall Protection Technique in Microwave Plasma Etching Using a Chopping Method", Extended Abstracts of the 18th Int. Conference on Solid State Devices and Materials, Tokyo, Japan, Aug., 1986, pp. 229-232.

Affiliated with

Also associated with

Rating

Dry etching by alternately etching and depositing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching by alternately etching and depositing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching by alternately etching and depositing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-53412