Dry etching apparatus and method

Details Dry etching apparatus and method Dry etching apparatus and method

1993-03-24

1994-11-29

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 156345, 156657, H01L 21306, B44C 122

Patent

active

053686853

ABSTRACT:
At an effective exhaust speed of 1200 liter/s, high frequency power with power surface density of 4.5 W/cm.sup.2 is made to discharge high density plasma, thereby carrying out dry etching. With a gas residence time of 100 ms or less, a gas flow rate controller is provided which has a response time substantially equal to the gas residence time. Etching can be performed at high speed with deposit reaction restrained and high ion current density. Because of the enhanced ion current density, etching providing high selectivity can be made with lowered ion energy. The time required for gas exchange in time modulation etching, multi-step etching and attachment/removal of electrostatic adsorption can be shortened to improve the etching throughput.

REFERENCES:
patent: 5242539 (1993-09-01), Kumihashi et al.
patent: 5252536 (1993-09-01), Schoenborn
Journal Electrochemical Society,1982, "Microwave Plasma Etching of Si With CF4 and SF6 Gas", pp. 2764-2769.
Journal Vacuum Science Technology, A7, 1989, "Plasma Characterization for a Divergent Field Electron Cyclotron Resonance Source", pp. 899-902.
Proceedings of 1990 Dry Process Symposium, "ECR Position Etching Technology for ILSI Productions", pp. 99-104.
Journal of Vacuum Science and Technology, B8(6), 1990, pp. 1185-1191.
Journal Vacuum Science Technology, A6, 1988, pp. 2348-2352.
Microelectronic Engineering, vol. 9, 1989, pp. 481-484.
Perry et al, "The Application of the Helicon Source to Plasma Process", Journal Vacuum Science Technology, B9(2), 1991.
1988 Dry Process Symposium, "Highly Selective Etching of Phosphorous-Doped Polycrystalline . . . ", pp. 54-57.
1990 Conference on Solid State Devices and Materials, Extended Abstract pp. 207-210.

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