Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging
Patent
1988-01-21
1989-02-21
Dees, Jose G.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Electron beam imaging
430325, 430328, 430394, 430942, 2504923, G03C 516
Patent
active
048064564
ABSTRACT:
A negative type electron beam sensitive resist film of CMS (chloro-methyl poly-styrene) is developed in a dry environment without using a vacuum system. The resist film is selectively exposed to an electron beam to form a latent image of a desired pattern therein and, then, subjected to irradiation by deep UV having a spectral component of 2537 .ANG. or shorter in an oxidizing gas such as atmospheric air. The average thickness decrease speeds during the dry development are 12 .ANG./min and 300 .ANG./min respectively for the portions exposed and unexposed to the electron beam, revealing a contrast ratio of 100 to 4 in terms of the remaining resist film thickness. A film of PGMA (poly-glycidyl metha-acrylate), and other negative type electron beam sensitive resists, may also be developed by the same method.
REFERENCES:
patent: 4403151 (1983-09-01), Mochiji et al.
patent: 4414059 (1983-11-01), Blum et al.
patent: 4612267 (1986-09-01), Heitmann et al.
Mochiji et al., "Negative Patterning of AZ1350J by Electron-Beam Desensitization . . . ", Japanese J. Appl. Physics, vol. 20, 1981, pp. 63-67.
Sugita et al., "Dry Etching of Polymer Coatings by Deep-UV Irradiation", Photographic Sci. and Eng., vol. 20(4), Jul./Aug. 1983, p. 146.
IBM Technical Disclosure Bulletin, vol. 19, No. 1, Jun. 1976, p. 316.
Patent Abstracts of Japan, vol. 9, No. 169, (E-328) [1892], 13th Jul. 1985.
Patent Abstracts of Japan, vol. 6, No. 151, (E-124) [1029], 11th Aug. 1982.
Patent Abstracts of Japan, vol. 7, No. 87, (P-190) [1232], 12th Apr. 1983.
IBM Technical Disclosure Bulletin, vol. 26, No. 6, Nov. 1983, p. 301.
Dees Jos,e G.
Fujitsu Limited
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