Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-08-25
2000-03-07
Monlin, Jr., Donald L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438205, 438234, H01L 2120
Patent
active
060339470
ABSTRACT:
The invention relates to a control circuit for semiconductor devices which is formed on a substrate (1) doped by a first dopant type, the integrated circuit comprising a first epitaxial layer (2) grown on the substrate (1) and doped by the first dopant type, and an isolation well (3) doped by a second dopant type, the control circuit comprising at least a first control transistor (M1) formed in a first well (8) doped by the second dopant type and formed in the insulation well (3). Thus, the control circuit comprises at least one N-channel MOS transistor accommodated within a well in direct contact with the isolation well to eliminate a buried layer that, in prior art arrangements, involved the presence of an undesired parasitic component.
REFERENCES:
patent: 4879584 (1989-11-01), Takagi et al.
patent: 4889822 (1989-12-01), Musumeci et al.
patent: 5065212 (1991-11-01), Ohata et al.
patent: 5072278 (1991-12-01), Paparo et al.
patent: 5512774 (1996-04-01), Nakagawa et al.
Cacciola Giovanna
Leonardi Salvatore
Montalbano Gianpiero
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Dietrich Michael
Galanthay Theodore E.
Monlin, Jr. Donald L.
Ross Kevin S.
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