Drive current increase in transistors by asymmetric...

Details Drive current increase in transistors by asymmetric... Drive current increase in transistors by asymmetric...

2009-04-14

2010-12-21

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000, C438S585000, C438S586000, C257SE21345, C257SE21415, C257SE21633, C257SE29279, C257SE29281

Reexamination Certificate

active

07855118

ABSTRACT:
By providing a substantially non-damaged semiconductor region between a pre-amorphization region and the gate electrode structure, an increase of series resistance at the drain side during the re-crystallization may be reduced, thereby contributing to overall transistor performance, in particular in the linear operating mode. Thus, symmetric and asymmetric transistor architectures may be achieved with enhanced performance without unduly adding to overall process complexity.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 026 213.7-33 dated Feb. 10, 2009.

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