Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-17
2007-07-17
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000, C257S616000, C257SE21092
Reexamination Certificate
active
10901568
ABSTRACT:
A method (100) of forming a transistor includes forming a gate structure (106, 108) over a semiconductor body and forming recesses (112) substantially aligned to the gate structure in the semiconductor body. Silicon germanium is then epitaxially grown (114) in the recesses, followed by forming sidewall spacers (118) over lateral edges of the gate structure. The method continues by implanting source and drain regions in the semiconductor body (120) after forming the sidewall spacers. The silicon germanium formed in the recesses resides close to the transistor channel and serves to provide a compressive stress to the channel, thereby facilitating improved carrier mobility in PMOS type transistor devices.
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Bu Haowen
Chidambaram Pr
Grider Douglas T.
Hall Lindsey
Smith Brian A.
Baumeister B. William
Brady III W. James
McLarty Peter K.
Such Matthew W.
Telecky , Jr. Frederick J.
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