Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-04
2009-02-17
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S401000, C257SE27086, C257SE29134, C257SE29264
Reexamination Certificate
active
07491995
ABSTRACT:
One aspect of the present subject matter relates to a memory. A memory embodiment includes a nanofin transistor having a first source/drain region, a second source/drain region above the first source/drain region, and a vertically-oriented channel region between the first and second source/drain regions. The nanofin transistor also has a surrounding gate insulator around the nanofin structure and a surrounding gate surrounding the channel region and separated from the nanofin channel by the surrounding gate insulator. The memory includes a data-bit line connected to the first source/drain region, at least one word line connected to the surrounding gate of the nanofin transistor, and a stacked capacitor above the nanofin transistor and connected between the second source/drain region and a reference potential. Other aspects are provided herein.
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Cruz Leslie Pilar
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
Tran Minh-Loan T
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