DRAM with a two stage voltage pull-down sense amplifier

Details DRAM with a two stage voltage pull-down sense amplifier DRAM with a two stage voltage pull-down sense amplifier

1992-08-12

1993-09-14

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Precharge

36518905, 36523008, G11C 1300

Patent

active

052455785

ABSTRACT:
There is an integrated circuits that has an improved N-channel sense amplifier that increases the digital one and zero range. The invention spikes the lower voltage digit line closer to ground shortly before equilibrating with the higher voltage digit line.

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patent: 4962326 (1990-10-01), Parkinson et al.
patent: 5042011 (1991-08-01), Casper et al.
"Half-Vdd bit-line sensing scheme in CMOS DRAM's", Journal of Solid-State Circuits, vol. SC-19, No. 4, Aug. 1984.
"Electronic Devices", by Thomas L. Floyd, 2nd ed., pub. by Merrill, a Bell & Howell informations company, Columbus, Ohio.

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