DRAM no capacitor dielectric process

Details DRAM no capacitor dielectric process DRAM no capacitor dielectric process

1996-11-15

1997-12-09

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438247, 438253, 438724, 438738, H01L 21265, H01L 21102

Patent

active

056960360

ABSTRACT:
A new method of fabricating the NO capacitor dielectric layers of dynamic random access memory (DRAM) cells is disclosed. Because NH.sub.4 Cl particles are soluble (dissolvable) in deionized (DI) water, the undesired NH.sub.4 Cl particles left in the thin nitride surface of the DRAM capacitor dielectric layer can be removed by high-speed spinning the silicon wafers while spraying DI water. At the same time, this high-speed spinning step produces a charge-up effect that can also help the thin nitride layer of the DRAM capacitors eliminate these defects. High quality capacitors are then achieved, and therefore high quality DRAM cells may also be produced using this method.

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Ghandhi, Sorab K. "VLSI Fabrication Principles Silicon and Gallium Arsenide," John Wiley & Sons, Inc. pp. 639-642, 1994.

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