DRAM (Dynamic Random Access Memory) cells

Details DRAM (Dynamic Random Access Memory) cells DRAM (Dynamic Random Access Memory) cells

2007-11-13

2007-11-13

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S246000, C438S249000, C438S392000, C257S301000, C257SE21396

Reexamination Certificate

active

11308404

ABSTRACT:
A DRAM cell with a self-aligned gradient P-well and a method for forming the same. The DRAM cell includes (a) a semiconductor substrate; (b) an electrically conducting region including a first portion, a second portion, and a third portion; (c) a first doped semiconductor region wrapping around the first portion, but electrically insulated from the first portion by a capacitor dielectric layer; (d) a second doped semiconductor region wrapping around the second portion, but electrically insulated from the second portion by a collar dielectric layer. The second portion is on top of and electrically coupled to the first portion, and the third portion is on top of and electrically coupled to the second portion. The collar dielectric layer is in direct physical contact with the capacitor dielectric layer. When going away from the collar dielectric layer, a doping concentration of the second doped semiconductor region decreases.

REFERENCES:
patent: 4761385 (1988-08-01), Pfiester
patent: 5498564 (1996-03-01), Geissler et al.
patent: 5998822 (1999-12-01), Wada
patent: 6163045 (2000-12-01), Mandelman et al.
patent: 6246175 (2001-06-01), Kou et al.
patent: 6249017 (2001-06-01), Togo
patent: 6265279 (2001-07-01), Radens et al.
patent: 6297088 (2001-10-01), King
patent: 6373086 (2002-04-01), Mandelman et al.
patent: 6608341 (2003-08-01), Schrems
patent: 6696717 (2004-02-01), Chang et al.
patent: 6744089 (2004-06-01), Wu
patent: 6767789 (2004-07-01), Bronner et al.
patent: 7019350 (2006-03-01), Hsu
patent: 7078291 (2006-07-01), Hsu
patent: 2002/0125521 (2002-09-01), Schrems
patent: 2004/0159873 (2004-08-01), Goldbach et al.
patent: 2004/0195612 (2004-10-01), Divakaruni et al.
patent: 2004/0209436 (2004-10-01), Chen
patent: 2004/0219747 (2004-11-01), Lin et al.
patent: 2005/0026359 (2005-02-01), Voigt
patent: 2005/0035389 (2005-02-01), Bulsara et al.
patent: 2005/0079680 (2005-04-01), Chen et al.
patent: 2005/0127423 (2005-06-01), Hsu
patent: 2007/0057304 (2007-03-01), Boescke et al.
patent: 63226058 (1988-09-01), None

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