Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-23
2007-01-23
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257SE29308, C365S185080, C438S257000
Reexamination Certificate
active
10783695
ABSTRACT:
Structures and methods for memory cells having a volatile and a non-volatile component in a single memory cell are provided. The memory cell includes a first source/drain region and a second source/drain region separated by a channel region in a substrate. A storage capacitor is coupled to one of the first and the second source/drain regions. A floating gate opposes the channel region and separated therefrom by a gate oxide. A control gate opposes the floating gate. The control gate is separated from the floating gate by a low tunnel barrier intergate insulator. The memory cell is adapted to operate in a first and a second mode of operation. The first mode of operation is a dynamic mode of operation and the second mode of operation is a repressed memory mode of operation.
REFERENCES:
patent: 4295150 (1981-10-01), Adam
patent: 4412902 (1983-11-01), Michikami et al.
patent: 4510584 (1985-04-01), Dias et al.
patent: 4545035 (1985-10-01), Guterman et al.
patent: 4556975 (1985-12-01), Smith et al.
patent: 4665417 (1987-05-01), Lam
patent: 4672240 (1987-06-01), Smith et al.
patent: 4688078 (1987-08-01), Hseih
patent: 4757360 (1988-07-01), Faraone et al.
patent: 4780424 (1988-10-01), Holler
patent: 4939559 (1990-07-01), DiMaria et al.
patent: 5042011 (1991-08-01), Casper et al.
patent: 5057448 (1991-10-01), Kuroda
patent: 5071782 (1991-12-01), Mori
patent: 5073519 (1991-12-01), Rodder
patent: 5153880 (1992-10-01), Owen et al.
patent: 5280205 (1994-01-01), Green et al.
patent: 5331188 (1994-07-01), Acovic et al.
patent: 5350738 (1994-09-01), Hase et al.
patent: 5353431 (1994-10-01), Doyle et al.
patent: 5399516 (1995-03-01), Bergendahl et al.
patent: 5418389 (1995-05-01), Watanabe
patent: 5429966 (1995-07-01), Wu et al.
patent: 5474947 (1995-12-01), Chang et al.
patent: 5488612 (1996-01-01), Heybruck
patent: 5497494 (1996-03-01), Combs et al.
patent: 5498558 (1996-03-01), Kapoor
patent: 5508544 (1996-04-01), Shah
patent: 5600592 (1997-02-01), Atsumi et al.
patent: 5618575 (1997-04-01), Peter
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5619051 (1997-04-01), Endo
patent: 5619642 (1997-04-01), Nielsen et al.
patent: 5627785 (1997-05-01), Gilliam et al.
patent: 5677867 (1997-10-01), Hazani
patent: 5691209 (1997-11-01), Liberkowski
patent: 5691230 (1997-11-01), Forbes
patent: 5739544 (1998-04-01), Yuki et al.
patent: 5798548 (1998-08-01), Fujiwara
patent: 5801401 (1998-09-01), Forbes
patent: 5852306 (1998-12-01), Forbes
patent: 5880991 (1999-03-01), Hsu et al.
patent: 5923056 (1999-07-01), Lee et al.
patent: 5936274 (1999-08-01), Forbes et al.
patent: 5952692 (1999-09-01), Nakazato et al.
patent: 5959465 (1999-09-01), Beat
patent: 5973355 (1999-10-01), Shirai et al.
patent: 5981350 (1999-11-01), Geusic et al.
patent: 5986932 (1999-11-01), Ratnakumar et al.
patent: 5991225 (1999-11-01), Forbes et al.
patent: 6009011 (1999-12-01), Yamauchi
patent: 6025228 (2000-02-01), Ibok et al.
patent: 6025627 (2000-02-01), Forbes et al.
patent: 6031263 (2000-02-01), Forbes et al.
patent: 6069380 (2000-05-01), Chou et al.
patent: 6069816 (2000-05-01), Nishimura
patent: 6077745 (2000-06-01), Burns, Jr. et al.
patent: 6108240 (2000-08-01), Lavi et al.
patent: 6124729 (2000-09-01), Noble et al.
patent: 6134175 (2000-10-01), Forbes et al.
patent: 6135175 (2000-10-01), Gaudreault et al.
patent: 6141238 (2000-10-01), Forbes et al.
patent: 6141248 (2000-10-01), Forbes et al.
patent: 6143636 (2000-11-01), Forbes et al.
patent: 6153468 (2000-11-01), Forbes et al.
patent: 6163049 (2000-12-01), Bui
patent: 6169306 (2001-01-01), Gardner et al.
patent: 6208164 (2001-03-01), Noble et al.
patent: 6210999 (2001-04-01), Gardner et al.
patent: 6229175 (2001-05-01), Uchida
patent: 6238976 (2001-05-01), Noble et al.
patent: 6246606 (2001-06-01), Forbes et al.
patent: 6249020 (2001-06-01), Forbes et al.
patent: 6249460 (2001-06-01), Forbes et al.
patent: 6306708 (2001-10-01), Peng
patent: 6307775 (2001-10-01), Forbes et al.
patent: 6317364 (2001-11-01), Guterman et al.
patent: 6323844 (2001-11-01), Yeh et al.
patent: 6341084 (2002-01-01), Numata et al.
patent: 6351411 (2002-02-01), Forbes et al.
patent: 6377070 (2002-04-01), Forbes
patent: 6424001 (2002-07-01), Forbes et al.
patent: 6433382 (2002-08-01), Orlowski et al.
patent: 6440801 (2002-08-01), Furukawa et al.
patent: 6461931 (2002-10-01), Eldridge
patent: 6475857 (2002-11-01), Kim et al.
patent: 6476434 (2002-11-01), Noble et al.
patent: 6504207 (2003-01-01), Chen et al.
patent: 6514842 (2003-02-01), Prall et al.
patent: 6521943 (2003-02-01), Mine et al.
patent: 6541280 (2003-04-01), Kaushik et al.
patent: 6566682 (2003-05-01), Forbes
patent: 6574143 (2003-06-01), Nakazato
patent: 6586797 (2003-07-01), Forbes et al.
patent: 6730575 (2004-05-01), Eldridge
patent: 6740928 (2004-05-01), Yoshii et al.
patent: 6753568 (2004-06-01), Nakazato et al.
patent: 6754108 (2004-06-01), Forbes
patent: 6778441 (2004-08-01), Forbes et al.
patent: 6881994 (2005-04-01), Lee et al.
patent: 6894944 (2005-05-01), Ishibashi et al.
patent: 6903367 (2005-06-01), Forbes
patent: 6950340 (2005-09-01), Bhattacharyya
patent: 6952032 (2005-10-01), Forbes et al.
patent: 6958937 (2005-10-01), Forbes et al.
patent: 6963103 (2005-11-01), Forbes
patent: 7027328 (2006-04-01), Forbes et al.
patent: 7042043 (2006-05-01), Forbes et al.
patent: 7068544 (2006-06-01), Forbes et al.
patent: 7074673 (2006-07-01), Forbes
patent: 7075829 (2006-07-01), Forbes
patent: 7087954 (2006-08-01), Forbes
patent: 2001/0013621 (2001-08-01), Nakazato
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2001/0055838 (2001-12-01), Walker et al.
patent: 2002/0008324 (2002-01-01), Shinkawata
patent: 2002/0024083 (2002-02-01), Noble et al.
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2002/0106536 (2002-08-01), Lee et al.
patent: 2002/0109138 (2002-08-01), Forbes
patent: 2002/0137250 (2002-09-01), Nguyen et al.
patent: 2002/0176293 (2002-11-01), Forbes et al.
patent: 2003/0042528 (2003-03-01), Forbes
patent: 2003/0043637 (2003-03-01), Forbes et al.
patent: 2004/0032773 (2004-02-01), Forbes
patent: 2004/0160830 (2004-08-01), Forbes
patent: 2005/0023595 (2005-02-01), Forbes et al.
patent: 2005/0023602 (2005-02-01), Forbes et al.
patent: 2005/0023603 (2005-02-01), Eldridge et al.
patent: 2005/0024945 (2005-02-01), Forbes
patent: 2005/0026349 (2005-02-01), Forbes et al.
patent: 2005/0169054 (2005-08-01), Forbes
patent: 2006/0001049 (2006-01-01), Forbes
patent: 2006/0002192 (2006-01-01), Forbes et al
Eierdal, L. , et al., “Interaction of oxygen with Ni(110) studied by scanning tunneling microscopy”,Surface Science, 312(1-2), (Jun. 1994), 31-53.
Marshalek, R. , et al., “Photoresponse Characteristics of Thin-Film Nickel—Nickel Oxide—Nickel Tunneling Junctions”,IEEE Journal of Quantum Electronics, QE-19(4), (1983), 743-754.
Aarik, Jaan , et al., “Anomalous effect of temperature on atomic layer deposition of titanium oxide”,Journal of Crystal Growth, (2000),pp. 531-537.
Aarik, Jaan , et al., “Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition”,Journal of Crystal Growth, 220(1-2), (2000), 105-113.
Afanes'ev, V , et al., “Electron energy barriers between (100)Si and ultrathin stacks of SiO2, AI2O3, and ZrO3 and ZrO2 insulators”,Applied Physics Letters, 78(20), (2001),pp. 3073-3075.
Arya, S. , et al., “Conduction Properties of Thin AI2O3 Films”,Thin Solid Films, 91, (1982),363-374.
Dipert, Brian , “Flash Memory Goes Mainstream”,IEEE Spectrum, 30(10), (Oct. 1993),48-52.
Eldridge, J. , et al., “Analysis of Ultrathin Oxide Growth on Indium”,Thin Solid Films, 12, (1972),pp. 447-451.
Eldridge, J. M., et al., “Growth of Thin PbO Layers on Lead Films”,Surface Science, 40, (1973),512-530.
Eldridge, J. , et al., “Measurement of Tunnel Current Density in a Metal-Oxide-Metal System as a Function of Oxide Thickness”,Proc. 12th Intern. Conf. on Low Temperature Physics, (1971),427-428.
Ferguson, J D., et al., “Atomic layer deposit
Baumeister B. William
Fulk Steven J.
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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