DRAM cell with enhanced SER immunity

Details DRAM cell with enhanced SER immunity DRAM cell with enhanced SER immunity

2005-03-08

2005-03-08

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S381000

Reexamination Certificate

active

06864136

ABSTRACT:
A memory cell that has first and second fully depleted transfer devices each having a body region and first and second diffused electrodes. The cell has a differential storage capacitor having at least one node abutting and in electrical contact with one of the first and second diffused electrodes of each of the transfer devices. The storage capacitor has a primary capacitance and a plurality of inherent capacitances, wherein the primary capacitance has a capaictive value that is at least approximately five times greater than that of the plurality of inherent capacitances.

REFERENCES:
patent: 4103342 (1978-07-01), Miersch et al.
patent: 4641165 (1987-02-01), Iizuka et al.
patent: 4686552 (1987-08-01), Teng et al.
patent: 4888733 (1989-12-01), Mobley
patent: 4927779 (1990-05-01), Dhong et al.
patent: 5134616 (1992-07-01), Barth Jr. et al.
patent: 5241211 (1993-08-01), Tashiro
patent: 5329479 (1994-07-01), Ota et al.
patent: 5567962 (1996-10-01), Miyawaki et al.
patent: 5606189 (1997-02-01), Adan
patent: 5780335 (1998-07-01), Henkels et al.
patent: 5929477 (1999-07-01), McAllister Burns et al.
patent: 5943279 (1999-08-01), Wada
patent: 6064588 (2000-05-01), Crafts
patent: 6077745 (2000-06-01), Burns et al.
patent: 6101117 (2000-08-01), Tiwari
patent: 6198151 (2001-03-01), Wada
patent: 6246083 (2001-06-01), Noble
patent: 6440801 (2002-08-01), Furukawa et al.
Choi, Y-K. et al., “30 nm ultra-thin-body SOI Mosfet with selective deposied Ge raised S/D”, Jun. 2000, 58th Dev. Res. Conf. (DRC), pp. 23-24.

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