Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-05
2005-04-05
Brock, II, Paul E (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S246000, C438S247000, C438S248000, C438S386000, C438S389000, C438S391000, C438S392000
Reexamination Certificate
active
06875653
ABSTRACT:
A memory device that includes a semiconductor substrate, and an array of memory cells, each cell being electrically isolated from adjacent cells and including an island formed from the substrate, the island having a top portion and at least one sidewall portion, and being spaced apart from other islands by a bottom surface on the substrate, a capacitor formed contiguous with the sidewall portion, and a transistor formed on the top portion of the island, the transistor including a gate oxide layer formed on a surface of the top portion, a gate formed on the gate oxide layer, and a first and a second diffused regions formed in the top portion, the first diffused region being spaced apart from the second diffused region.
REFERENCES:
patent: 4704368 (1987-11-01), Goth et al.
patent: 4999689 (1991-03-01), Iguchi et al.
patent: 5223447 (1993-06-01), Lee et al.
patent: 5684313 (1997-11-01), Kenney
patent: 5981332 (1999-11-01), Mandelman et al.
patent: 6090661 (2000-07-01), Perng et al.
patent: 06097384 (1994-04-01), None
Brock II Paul E
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
ProMOS Technologies Inc.
LandOfFree
DRAM cell structure with buried surrounding capacitor and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with DRAM cell structure with buried surrounding capacitor and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DRAM cell structure with buried surrounding capacitor and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3408842