Dram cell capacitors having U-shaped electrodes with rough...

Details Dram cell capacitors having U-shaped electrodes with rough... Dram cell capacitors having U-shaped electrodes with rough...

2005-01-04

2005-01-04

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257S301000, C257S304000, C257S305000

Reexamination Certificate

active

06838719

ABSTRACT:
Methods of forming integrated circuit capacitors include the steps of forming a first electrically insulating layer having a conductive plug therein, on a semiconductor substrate, and then forming second and third electrically insulating layers of different materials on the first electrically insulating layer. A contact hole is then formed to extend through the second and third electrically insulating layers and expose the conductive plug. Next, a conductive layer is formed in the contact hole and on the third electrically insulating layer. A step is then performed to planarize the conductive layer to define a U-shaped electrode in the contact hole. The third electrically insulating layer is then etched-back to expose upper portions of outer sidewalls of the U-shaped electrode, using the second electrically insulating layer as an etch stop layer. However, the second electrically insulating layer is not removed but is left to act as a supporting layer for the U-shaped electrode. This second electrically insulating layer preferably comprises a composite of a nitride layer and an oxide layer. To increase the effective surface area of the U-shaped electrode, an HSG layer may also be formed on the inner and outer sidewalls of the U-shaped electrode.

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