DRAM cell capacitor fabrication method

Details DRAM cell capacitor fabrication method DRAM cell capacitor fabrication method

1996-08-23

1999-07-13

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

059239727

ABSTRACT:
A method for making a cell capacitor of a semiconductor device such as a dynamic random access memory includes steps for increasing the height of a capacitor electrode. With increased height, the capacitance of the fabricated capacitor is increased while allowing high integration.

REFERENCES:
patent: 5140389 (1992-08-01), Kimura et al.
patent: 5488011 (1996-01-01), Figura et al.
patent: 5753550 (1998-05-01), Murata et al.

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