DRAM cell and method of fabricating the same

Details DRAM cell and method of fabricating the same DRAM cell and method of fabricating the same

1999-10-01

2000-09-12

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438156, 438238, 438268, 438269, 438284, H01L 218242

Patent

active

061177245

ABSTRACT:
A method of fabricating a DRAM cell and the DRAM cell include a substrate, and a bit line formed in a first direction on the substrate. A channel region is then formed on a portion of the bit line. The channel region has a lateral surface extending vertically from the bit line. A first insulating layer is formed over the substrate, excluding the channel region, and is formed on at least a portion of the lateral surface of the channel region. A gate electrode is formed on a portion of the first insulating layer, which is on the portion of the lateral surface of the channel region, and a word line, connected to the gate electrode, is formed in a second direction on the first insulating layer. A second insulating layer is then formed over a portion of the substrate. The second insulating layer has a contact hole which exposes the channel region. Next, a capacitor is formed on a portion of the second insulating layer and on the channel region via the contact hole.

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patent: 5828094 (1998-10-01), Lee

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