Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-06
2009-08-04
Purvis, Sue (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000, C257S328000, C257S401000, C257SE29262, C257SE27096
Reexamination Certificate
active
07569876
ABSTRACT:
The invention includes a method of forming a semiconductor construction. Dopant is implanted into the upper surface of a monocrystalline silicon substrate. The substrate is etched to form a plurality of trenches and cross-trenches which define a plurality of pillars. After the etching, dopant is implanted within the trenches to form a source/drain region that extends less than an entirety of the trench width. The invention includes a semiconductor construction having a bit line disposed within a semiconductor substrate below a first elevation. A wordline extends elevationally upward from the first elevation and substantially orthogonal relative to the bit line. A vertical transistor structure is associated with the wordline. The transistor structure has a channel region laterally surrounded by a gate layer and is horizontally offset relative to the bit line.
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Micro)n Technology, Inc.
Purvis Sue
Ward Eric
Wells St. John P.S.
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