Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-14
2005-06-14
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257S344000
Reexamination Certificate
active
06906380
ABSTRACT:
Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.
REFERENCES:
patent: 6649975 (2003-11-01), Baliga
patent: 6838730 (2005-01-01), Kawaguchi et al.
patent: 2002/0125528 (2002-09-01), Kawaguchi et al.
patent: 2003/0001203 (2003-01-01), Ono et al.
patent: 2003/0006456 (2003-01-01), Takahashi et al.
Bai Yuming
Lui Kam-Hong
Pattanayak Deva
Qi Jason (Jianhai)
Wong Ronald
Ngo Ngan V.
Vishay-Siliconix
Wagner , Murabito & Hao LLP
LandOfFree
Drain side gate trench metal-oxide-semiconductor field... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Drain side gate trench metal-oxide-semiconductor field..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Drain side gate trench metal-oxide-semiconductor field... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3488830