Drain extension regions in low voltage lateral DMOS devices

Details Drain extension regions in low voltage lateral DMOS devices Drain extension regions in low voltage lateral DMOS devices

1997-07-21

1998-12-08

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438336, H01L 218224

Patent

active

058468668

ABSTRACT:
Disclosed are MOSFET devices in which a region extends from the drain and is, self-aligned with the gate. The region has a lower dopant concentration than the drain. The presence of the extension region substantially enhances breakdown voltage while not adding excessive on-resistance for the devices.

REFERENCES:
patent: 5517046 (1996-05-01), Hsing et al.
patent: 5635743 (1997-06-01), Takahashi

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