Drain-extended MOS transistors and methods for making the same

Details Drain-extended MOS transistors and methods for making the same Drain-extended MOS transistors and methods for making the same

2007-02-13

2007-02-13

Owens, Douglas W. (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S306000, C438S307000

Reexamination Certificate

active

11082166

ABSTRACT:
Drain-extended MOS transistors (T1, T2) and semiconductor devices (102) are described, as well as fabrication methods (202) therefor, in which a p-buried layer (130) is formed prior to formation of epitaxial silicon (106) over a substrate (104), and a drain-extended MOS transistor (T1, T2) is formed in the epitaxial silicon layer (106). The p-buried layer (130) may be formed above an n-buried layer (120) in the substrate (104) for high-side driver transistor (T2) applications, wherein the p-buried layer (130) extends between the drain-extended MOS transistor (T2) and the n-buried layer (120) to inhibit off-state breakdown between the source (154) and drain (156).

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