Drain extended MOS devices with self-aligned floating region...

Details Drain extended MOS devices with self-aligned floating region... Drain extended MOS devices with self-aligned floating region...

2007-06-26

2007-06-26

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S305000

Reexamination Certificate

active

10378402

ABSTRACT:
Semiconductor devices and manufacturing methods therefor are disclosed, in which a drain-extended MOS transistor comprises a self-aligned floating region proximate one end of the transistor gate and doped with a first type dopant to reduce channel hot carrier degradation, as well as an oppositely doped first source/drain laterally spaced from the first end of the gate structure in a semiconductor body. The device may further comprise a resurf region doped to a lower concentration than the floating region to facilitate improved breakdown voltage performance. A method of fabricating a drain-extended MOS transistor in a semiconductor device is disclosed, comprising providing first dopants to a floating region in a semiconductor body, which is self-aligned with the first end of a gate structure, and providing second dopants to source/drains of the semiconductor body, wherein the first and second dopants are different.

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