Downstream microwave plasma processing apparatus having an impro

Details Downstream microwave plasma processing apparatus having an impro Downstream microwave plasma processing apparatus having an impro

1990-01-08

1991-01-22

Paschall, M. H.

Electric heating

Metal heating

By arc

2191214, 219 1055R, 21912142, 156345, 20429823, B23K 900

Patent

active

049872842

ABSTRACT:
A downstream microwave plasma processing apparatus useful in fabricating an integrated circuit semiconductor device includes a waveguide, a microwave transmitting window perpendicular to a microwave electric field in the waveguide, a plasma generating chamber below the window and a reaction chamber separated from the plasma generating region by a gas-porous microwave shield. The microwave energy is transmitted into the plasma generating chamber through the microwave transmitting window, and generates a plasma which is confined therein by the shield. Radicals of a short-lived reactive gas, generated in the plasma, pass through the shield and impinge onto a workpiece placed in the reaction chamber. Uniform and effective downstream plasma etching or ashing is produced.

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patent: 4718976 (1988-01-01), Fujimura
patent: 4741800 (1988-05-01), Yamazaki
English Abstract of Japanese Patent Application 60-25234, 2-08-85.

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