Double-side corrugated cylindrical capacitor structure of high d

Details Double-side corrugated cylindrical capacitor structure of high d Double-side corrugated cylindrical capacitor structure of high d

1997-02-05

1998-12-01

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218242

Patent

active

058438220

ABSTRACT:
A method of fabricating double-side corrugated cylindrical capacitor of high density Dynamic Random Access Memory (DRAM) cells. The corrugated capacitor shape is achieved by depositing the thermal chemical vapor deposition (CVD) oxide and the plasma-enhanced CVD (PECVD) oxide alternating layers. Then, the thermal CVD oxide and the PECVD oxide layers are vertically etched to form two trenches followed by laterally etched by hydrofluoric acid (HF). Because hydrofluoric acid (HF) etches the thermal CVD oxide at a slower rate than etches the PECVD oxide, a cavity is formed in each PECVD oxide layer along the trenches. Finally, polysilicon layer is deposited filling into the trenches. Therefore, the double-side corrugated shape capacitor surface is created that increases the surface area of the capacitor considerably. The cylindrical capacitor storage node of the DRAM capacitor of this method has much greater surface area so as to increase the capacitance value of the DRAM capacitor, that can achieve high packing density of the integrated circuit devices.

REFERENCES:
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patent: 5637523 (1997-06-01), Fazan et al.
patent: 5656536 (1997-08-01), Wu
H. Watanabe et al., "A new cylindrical capacitor using hemispherical grained Si (HSG-Si) for 256 Mb DRAMs", IEDM 92, pp. 259-262, 1992.

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