Double-poly monos flash EEPROM cell

Details Double-poly monos flash EEPROM cell Double-poly monos flash EEPROM cell

1996-07-19

1997-12-30

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257317, 257319, 257321, 257 34, 257 52, H01L 29788, H01L 2976

Patent

active

057033889

ABSTRACT:
The present invention discloses a double poly metal oxide.backslash.nitride.backslash.oxide semiconductor electrically erasable programmable read only memory (EEPROM) for use in semiconductor memories. The EEPROM structure includes a select gate, an oxide.backslash.nitride.backslash.oxide layer, and a control gate. The control gate is formed on the oxide.backslash.nitride.backslash.oxide layer. A lightly doped drain (LDD) structure is formed adjacent to the drain and underneath the control gate.

REFERENCES:
patent: 4964080 (1990-10-01), Tzeng
patent: 5326999 (1994-07-01), Kim et al.
patent: 5338952 (1994-08-01), Yamauchi
patent: 5541130 (1996-07-01), Ogura et al.

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