Double patterning with a double layer cap on carbonaceous...

Details Double patterning with a double layer cap on carbonaceous... Double patterning with a double layer cap on carbonaceous...

2011-03-08

2011-03-08

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S394000, C427S249100

Reexamination Certificate

active

07901869

ABSTRACT:
Methods to etch features in a substrate with a multi-layered double patterning mask. The multi-layered double patterning mask includes a carbonaceous mask layer, a first cap layer on the carbonaceous mask layer and a second cap layer on the first cap layer. After forming the multi-layered mask, a first lithographically defined pattern is etched into the second cap layer. A double pattern that is a composition of the first lithographically defined pattern etched in the second cap layer and a second lithographically defined pattern is then etched into the first cap layer and the carbonaceous mask layer. The double pattern formed in the carbonaceous mask layer is then transferred to a substrate layer and any portion of the multi-layered mask remaining is then removed.

REFERENCES:
patent: 6110828 (2000-08-01), Guo et al.
patent: 2002/0164868 (2002-11-01), Chang et al.
patent: 2005/0048771 (2005-03-01), Gao et al.
patent: 2005/0167394 (2005-08-01), Iiu et al.
patent: 2007/0077526 (2007-04-01), Finders
“Double-paterning lithography,” Imec, http://www.imec.be/wwwinter/mediacenter/en/SR2006/681406.html, printed Apr. 18, 2007, 3 pgs.

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