Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-03-29
2011-03-29
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C430S005000
Reexamination Certificate
active
07915171
ABSTRACT:
Double patterning techniques and structures are generally described. In one example, a method includes depositing a first photoresist to a semiconductor substrate, forming a first integrated circuit (IC) pattern in the first photoresist, the first IC pattern comprising one or more trench structures, protecting the first IC pattern in the first photoresist from actions that form a second IC pattern in a second photoresist, depositing the second photoresist to the first IC pattern, and forming the second IC pattern in the second photoresist, the second IC pattern comprising one or more structures that are sufficiently close to the one or more trench structures of the first IC pattern to cause scumming of the second photoresist in the one or more trench structures of the first IC pattern.
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Sivakumar Swaminathan
Tingey Matthew
Wallace Charles H.
Coleman W. David
Cool Patent P.C.
Curtin Joseph P.
Intel Corporation
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