Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-07-12
2011-07-12
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S703000
Reexamination Certificate
active
07977242
ABSTRACT:
A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.
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Li Lumin
Reza Sadjadi S. M.
Romano Andrew R.
Beyer Law Group LLP
Brewster William M.
Lam Research Corporation
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