Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-01
2005-11-01
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S329000, C257S331000, C257S332000
Reexamination Certificate
active
06960806
ABSTRACT:
Accordingly, the present invention provides a double gated transistor and a method for forming the same that results in improved device performance and density. The preferred embodiment of the present invention uses provides a double gated transistor with asymmetric gate doping, where one of the double gates is doped degenerately n-type and the other degenerately p-type. By doping on of the gates n-type, and the other p-type, the threshold voltage of the resulting device is improved. In particular, by asymmetrically doping the two gates, the resulting transistor can, with adequate doping of the body, have a threshold voltage in a range that enables low-voltage CMOS operation. For example, a transistor can be created that has a threshold voltage between 0V and 0.5V for nFETs and between 0 and −0.5V for pFETs.
REFERENCES:
patent: 4041519 (1977-08-01), Melen
patent: 4996575 (1991-02-01), Ipri et al.
patent: 5032529 (1991-07-01), Beitman et al.
patent: 5899710 (1999-05-01), Mukai
patent: 6197672 (2001-03-01), Lin et al.
patent: 0 694 977 (1996-01-01), None
Kim K et al, “Double-Gate CMOS: Symmetrical-Versus Asymmetrical-Gate Devices”, IEEE Transactions on Electron Devices, IEEE Inc. New York, US, vol. 48, No. 2, Feb. 2001, pp. 294-299, XP001038978, ISSN: 0018-9383.
Bryant Andres
Fried David M.
Ieong Meikei
Muller K. Paul
Nowak Edward J.
Abraham Fetsum
Kotulak Richard M.
Schmeiser Olsen & Watts
LandOfFree
Double gated vertical transistor with different first and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Double gated vertical transistor with different first and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double gated vertical transistor with different first and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3487933