Double diffused MOS device and method

Details Double diffused MOS device and method Double diffused MOS device and method

1996-06-28

1998-10-06

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438529, H01L 21336

Patent

active

058175644

ABSTRACT:
The double lightly diffused transistor has drain regions with a lightly doped arsenic region 42 entirely contained within a lightly doped phosphorus region 40. The arsenic region is implanted with a dose less than 1.times.10.sup.15 ions/cm.sup.2 and is preferably implanted with a dose of about 3.times.10.sup.3 to 2.times.10.sup.14 ions/cm.sup.2. The drains are silicided for ohmic contact.

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