Double density method for wirebond interconnect

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S617000, C438S106000

Reexamination Certificate

active

07655552

ABSTRACT:
A method, comprising bonding a first wire to a single die bond pad to form a first bond, bonding the first wire to a bond post to form a second bond, bonding a second wire to the first bond, and coupling the second wire to the bond post.

REFERENCES:
patent: 2002/0153615 (2002-10-01), Komiyama et al.
patent: 2005/0164486 (2005-07-01), Lua et al.
“Fine Pitch Ball Bonding,” Gaiser Tool Company, http://www.gaisertool.com/bonding/products/capillaries/info/fineptich.html, 1999, 3 p.
Geissinger, John; Keller, Frank; Trevino, Scott; Kamel, Toru; “Tape Based CSP Package Supports Fine Pitch Wirebonding,” The International Electronics Manufacturing Technology Symposium (IEMT 2002) Proceedings, 2002, pp. 41-45.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Double density method for wirebond interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double density method for wirebond interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double density method for wirebond interconnect will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4184208

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.