Double coding processes for mask read only memory (ROM) devices

Details Double coding processes for mask read only memory (ROM) devices Double coding processes for mask read only memory (ROM) devices

1998-04-20

1999-03-23

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438278, H01L 218236

Patent

active

058858733

ABSTRACT:
The present invention includes forming a thin oxide layer and a polysilicon layer on a substrate. A thin silicon nitride layer is then formed on the polysilicon layer. An etching is performed to etch back the silicon nitride layer and the polysilicon layer on a NMOS cell region. Next, a blanket ion implantation is carried out to form lightly doped drain regions. A coding oxide layer is formed on the NMOS cell region. Then, the silicon nitride layer is stripped. A second polysilicon layer is successively deposited over the substrate. The polysilicon layer, the gate oxide layer and the coding oxide layer are patterned to form the gate structures. A second ion implantation is used to implant ions to form LDD regions. Side wall spacers are then formed on the side walls of the gate structures. Next, a third ion implantation is then carried out to dope ions into the substrate thereby forming source and drain regions. A high temperature thermal anneal is performed to activate the dopant.

REFERENCES:
patent: 4233671 (1980-11-01), Gerzberg et al.
patent: 4898838 (1990-02-01), Morris et al.
patent: 5786252 (1998-07-01), Ludikhuize et al.

Affiliated with

Also associated with

Rating

Double coding processes for mask read only memory (ROM) devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Double coding processes for mask read only memory (ROM) devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double coding processes for mask read only memory (ROM) devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2124718