Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-07-11
2006-07-11
Richards, N. Drew (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S283000, C438S525000
Reexamination Certificate
active
07074656
ABSTRACT:
A semiconductor structure includes of a plurality of semiconductor fins overlying an insulator layer, a gate dielectric overlying a portion of said semiconductor fin, and a gate electrode overlying the gate dielectric. Each of the semiconductor fins has a top surface, a first sidewall surface, and a second sidewall surface. Dopant ions are implanted at a first angle (e.g., greater than about 7°) with respect to the normal of the top surface of the semiconductor fin to dope the first sidewall surface and the top surface. Further dopant ions are implanted with respect to the normal of the top surface of the semiconductor fin to dope the second sidewall surface and the top surface.
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Chen Hao-Yu
Hu Chenming
Wang Ping-Wei
Yang Fu-Liang
Yeo Yee-Chia
Richards N. Drew
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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