Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-02-03
2008-10-28
Landau, Matthew C. (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21057, C257SE21120, C257SE21147, C257SE21248, C257SE21212
Reexamination Certificate
active
07442631
ABSTRACT:
A doping method comprising the steps of; obtaining a proportion X of ions of a compound including a donor or an acceptor impurity in total ions from mass spectrum by using a first source gas of a first concentration; analyzing a peak concentration Y of the compound in a first processing object which is doped by using a second source gas of a second concentration equal to or lower than the first concentration, referring to a dose amount of total ions as D0and setting an acceleration voltage at a value, obtaining a dose amount D1of total ions from a expression, Y=(D1/D0)(aX+b), and doping a second processing object with the donor or the acceptor impurity by a ion doping apparatus using a third source gas, wherein a dose amount of total ions is set at D1, and an acceleration voltage is set at the value.
REFERENCES:
patent: 4727044 (1988-02-01), Yamazaki
patent: 4959700 (1990-09-01), Yamazaki
patent: 5064775 (1991-11-01), Chang
patent: 5104818 (1992-04-01), Silver
patent: 5132754 (1992-07-01), Serikawa et al.
patent: 5142344 (1992-08-01), Yamazaki
patent: 5247190 (1993-09-01), Friend et al.
patent: 5313077 (1994-05-01), Yamazaki
patent: 5315132 (1994-05-01), Yamazaki
patent: 5393986 (1995-02-01), Yoshinouchi et al.
patent: 5399502 (1995-03-01), Friend et al.
patent: 5514879 (1996-05-01), Yamazaki
patent: 5543636 (1996-08-01), Yamazaki
patent: 5614732 (1997-03-01), Yamazaki
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5859445 (1999-01-01), Yamazaki
patent: 5904509 (1999-05-01), Zhang et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 6011277 (2000-01-01), Yamazaki
patent: 6013332 (2000-01-01), Goto et al.
patent: 6165876 (2000-12-01), Yamazaki et al.
patent: 6258638 (2001-07-01), Tanabe et al.
patent: 6353244 (2002-03-01), Yamazaki et al.
patent: 6455360 (2002-09-01), Miyasaka
patent: 6960498 (2005-11-01), Nakamura
patent: 2001/0034089 (2001-10-01), Yamazaki et al.
patent: 2003/0232465 (2003-12-01), Hayakawa
patent: 2004/0005745 (2004-01-01), Nakamura
patent: 2006/0005768 (2006-01-01), Nakamura
patent: 05-171438 (1993-07-01), None
patent: 07-130652 (1995-05-01), None
patent: 08-077959 (1996-03-01), None
patent: 09-106779 (1997-04-01), None
patent: 09-219173 (1997-08-01), None
patent: 10-092576 (1998-04-01), None
patent: 10-223553 (1998-08-01), None
patent: 10-302707 (1998-11-01), None
patent: 11-162397 (1999-06-01), None
patent: 2000-311867 (2000-11-01), None
patent: 2001-357813 (2001-12-01), None
patent: 2004-039936 (2004-02-01), None
patent: WO-1990/013148 (1990-11-01), None
Muller et al., Device electronics for integrated circuits, John Wiley & Sons, pp. 80 and 398, 1986.
Qin et al., Plasma Immersion Ion Implantation Doping Using a Microwave Multipolar Bucket Plasma, IEEE Transactions on Electron Devices, vol. 39, p. 2354-2358, 1992.
Chen et al., Study of PH3 and B2H5 ion beam species generated by inductively coupled plasma, IEEE, p. 1218-1221, 1999.
Koezuka Junichi
Suzuki Naoki
Costellia Jeffrey L.
Landau Matthew C.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Yang Minchul
LandOfFree
Doping method and method of manufacturing field effect... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Doping method and method of manufacturing field effect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping method and method of manufacturing field effect... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3991597