Doped structure for finfet devices

Details Doped structure for finfet devices Doped structure for finfet devices

2007-02-21

2008-08-26

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S347000, C257SE29137

Reexamination Certificate

active

07416925

ABSTRACT:
A semiconductor device includes a substrate and an insulating layer on the substrate. The semiconductor device also includes a fin structure formed on the insulating layer, where the fin structure includes first and second side surfaces, a dielectric layer formed on the first and second side surfaces of the fin structure, a first gate electrode formed adjacent the dielectric layer on the first side surface of the fin structure, a second gate electrode formed adjacent the dielectric layer on the second side surface of the fin structure, and a doped structure formed on an upper surface of the fin structure in the channel region of the semiconductor device.

REFERENCES:
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Co-Pending U.S. Appl. No. 10/653,274, filed on Sep. 3, 2003, entitled “Doped Structure for FinFET Devices”.

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