Dopant implantation method using multi-step implants

Details Dopant implantation method using multi-step implants Dopant implantation method using multi-step implants

2011-08-30

2011-08-30

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S276000, C438S278000, C438S289000, C438S301000, C438S305000, C438S307000

Reexamination Certificate

active

08008158

ABSTRACT:
A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration, and without annealing the substrate after the implanting step, performing at least one second implanting step to implant at least one second concentration of dopants into the region of the substrate to bring the dopant concentration in the region to the target dopant concentration.

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Liefting et al., Improved Device Performance by Multistep or Carbon Co-Implants, IEEE Transactions on Electron Devices, vol. 41, No. 1, Jan. 1994, pp. 50-55.

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