Dopant-diffusion buffered buried contact module for integrated c

Details Dopant-diffusion buffered buried contact module for integrated c Dopant-diffusion buffered buried contact module for integrated c

1993-05-25

1995-08-22

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257362, H01L 2980, H01L 2906

Patent

active

054442834

ABSTRACT:
A buried contact module is provided that includes a dopant-diffusion buffer layer. The dopant-diffusion buffer layer is formed with a thin dielectric region fabricated between the polysilicon contact region and the well region. The dielectric region formed of, for example, silicon dioxide, limits the amount of phosphorous diffusion into the well region. Thus, a buried contact junction can be formed in an integrated circuit having a high punch-through voltage characteristic, a low junction leakage current characteristic and a low polysilicon resistance. In addition, the buried contact junction maintains a relatively low buried contact resistance.

REFERENCES:
patent: 4095251 (1978-06-01), Dennard et al.
patent: 4941028 (1990-07-01), Chen et al.

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