Dopant activation anneal to achieve less dopant diffusion...

Details Dopant activation anneal to achieve less dopant diffusion... Dopant activation anneal to achieve less dopant diffusion...

2011-06-28

2011-06-28

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S710000, C438S715000

Reexamination Certificate

active

07968441

ABSTRACT:
A method and apparatus for forming a semiconductor device. A semiconductor substrate is implanted with dopants. The substrate is subjected to a cleaning process employing electrically neutral nitrogen and fluorine radicals to produce an oxygen-free surface having dangling bonds. Before any further exposure to oxidizing gases, the substrate is annealed by thermal treatment to activate and distribute the dopants. A gate oxide layer is formed over the annealed surface. The apparatus performs all such treatments without breaking vacuum.

REFERENCES:
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patent: 2005/0257890 (2005-11-01), Park et al.
patent: 2008/0160210 (2008-07-01), Yang et al.
patent: 2008/0230846 (2008-09-01), Obeng et al.
patent: 2009/0162996 (2009-06-01), Ramaswamy et al.

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