Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-02-18
1994-10-18
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257339, H01L 2910, H01L 2978
Patent
active
053571355
ABSTRACT:
Body to drain junction breakdown, due to avalanching in DMOST devices, can be controlled. The invention lowers the electric field gradients in the vicinity of the PN junction. The structure employed to enhance breakdown behavior is specifically applied to a vertical DMOST. The N type doping profile in the vicinity of the body to drain junction is tailored by constructing a P-nu-N-N.sup.+ type diode structure where nu is a low N type impurity concentration region. The N type region is of higher impurity concentration and is more extensive. With the nu region having one-half of the impurity concentration of the N region and an extent of about two microns, the avalanche breakdown voltage is about 27% higher than the conventional PN junction diode. By making the nu region impurity concentration one-fourth that of the N region, the breakdown voltage is 40% higher.
REFERENCES:
patent: 3921199 (1975-11-01), Yuan et al.
patent: 4743952 (1988-05-01), Baliga
Aronowitz Sheldon
Gadepally Bhaskar V. S.
Meng Peter
Mohammadi Farrokh
Walker George P.
James Andrew J.
Meier Stephen D.
National Semiconductor Corporation
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