Farrokh Mohammadi

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Application of deep-junction non-self-aligned transistors for su

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Dmost junction breakdown enhancement

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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High-reliablity single-poly eeprom cell

Static information storage and retrieval – Magnetic bubbles – Guide structure
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Profile ID: LFUS-PAI-P-1364227

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