DMOS transistors with schottky diode body structure

Details DMOS transistors with schottky diode body structure DMOS transistors with schottky diode body structure

1997-03-28

1999-07-20

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257379, 257332, H01L 2976

Patent

active

059259108

ABSTRACT:
A DMOS device in a complex integrated circuit having a well region defined by a buried isolation region and an overlapping deep drain region within an epitaxial layer formed over a substrate, a body region having two source regions within the well region, insulated gates over the two source regions, and a Schottky contact over a central portion of the well region and spaced from the body region. The Schottky contact defines a Schottky diode within the epitaxial layer for diverting current from the substrate in the event of a below ground effect or an oversupply effect. The invention reduces or eliminates altogether the effects of parasitic transistors in the complex integrated circuit.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 4811065 (1989-03-01), Cogan
patent: 4979001 (1990-12-01), Alter
patent: 4989058 (1991-01-01), Colak et al.
patent: 5061981 (1991-10-01), Hall
patent: 5065213 (1991-11-01), Frisina et al.
patent: 5156989 (1992-10-01), Williams et al.
patent: 5164802 (1992-11-01), Jones et al.
patent: 5286995 (1994-02-01), Malhi
patent: 5525832 (1996-06-01), Consiglio et al.
patent: 5637889 (1997-06-01), Groover et al.
patent: 5642295 (1997-06-01), Smayling

Affiliated with

Also associated with

Rating

DMOS transistors with schottky diode body structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with DMOS transistors with schottky diode body structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DMOS transistors with schottky diode body structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1323972